Figure 5: Electronic structure of the double-layer FeSe/SrTiO 3 film (sample #2) annealed with increasing temperatures. | Nature Communications

Figure 5: Electronic structure of the double-layer FeSe/SrTiO 3 film (sample #2) annealed with increasing temperatures.

From: Dichotomy of the electronic structure and superconductivity between single-layer and double-layer FeSe/SrTiO3 films

Figure 5

The highest annealing temperature is 350 °C for the sequence 1, 450 °C for the sequence 2, 500 °C for the sequence 3, 535 °C for the sequence 4 and then kept at 535 °C to increase the annealing time for the sequences 5 and 6. Refer to the Methods for experimental details of the annealing process. (a) Fermi surface evolution during the annealing process. (b–d) Band structure evolution for the momentum cuts across Γ (b), M2 (c) and M3 (d). The location of the three cuts are the same as shown in Fig. 3e. The band structures shown here are second derivatives of the original images with respect to energy. (e) Band structure (original data) of the annealed double-layer FeSe/SrTiO3 film (corresponding to the sequence 6) measured along cut 2 across M2 at 23 K (left panel) and 75 K (right panel). The photoemission images are divided by the corresponding Fermi distribution function to highlight opening or closing of an energy gap. (f) Corresponding symmetrized EDCs on the Fermi momentum measured at different temperatures.

Back to article page