Table 1 Working device yields of G/PBASE/G devices with various PBASE SAM growth time.

From: Giant enhancement in vertical conductivity of stacked CVD graphene sheets by self-assembled molecular layers

Growth time

Number of junctions

Number of shorts

Number of traces

Yield of junctions (%)

0

15

2

360

86.7

4

15

1

360

93.3

6

15

1

360

93.3

8

15

2

360

86.7

10

15

1

360

93.3

24

15

0

360

100

36

15

0

360

100

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