Figure 4: Theoretical modelling of the electroresistance effect in the FTJ with a composite Gr/BTO barrier.
From: Ferroelectric tunnel junctions with graphene electrodes
(a) Calculated conductance per area (G/A) as a function of ammonia barrier thickness (tA) for polarization pointing up (blue) and down (red) and ammonia barrier height UA=1 eV. Insets show the effective potential profile across the tunnel junction for polarization up (bottom inset) and down (top inset). Here the region of −1 nm<x<0 represents the ammonia interlayer and the region of 0<x<2.4 nm corresponds to the BaTiO3 ferroelectric layer. (b) ROFF/RON resistance ratio as a function of tA for UA=1 eV (open squares), UA=2 eV (solid circles) and UA=5 eV (open circles).
