Figure 1: Self-aligned, one-dimensional customization.
From: Enabling complex nanoscale pattern customization using directed self-assembly
Schematic (a,c,e,g) and SEM images (b,d,f,h) of the fabrication process flow: (a,b) HSQ prepattern. (c,d) DSA and O2 RIE to remove PMMA domains. The remaining PS domains and HSQ prepattern form a composite mask for following pattern transfer. (e,f) Pattern transfer of the composite mask into the organic transfer layer using CF4 and O2 RIEs. (g,h) Pattern tone inversion. (i) SEM image of a fragmented HSQ prepattern and (j) a SEM image of the resulting fragmented DSA-generated grating. Scale bars are 100 nm (b,d,f,h) and 200 nm (i,j).
