Figure 2: Two-dimensional customization using masking features.
From: Enabling complex nanoscale pattern customization using directed self-assembly
SEM images of an exemplary prepattern and resulting DSA with pattern transfer and tone inversion under two different conditions. (a) Plan view (upper) and schematic cross-section (lower) of a prepattern including an elongated masking feature. (b) PS-b-PMMA DSA results in the area of that masking feature with parallel lamellae (dark regions), exhibiting poor fidelity with the masking feature dimensions and adjacent misaligned perpendicular lamellae. (c) Pattern transfer and tone inversion after DSA featuring defects similar to those in (b). (d) DSA over the same masking feature with excellent rectification and (e) subsequent pattern transfer and tone inversion. All SEM images are at the same magnification. Dark blue and light blue false colour overlay in (a,b,d) indicate the positions of the masking feature and guiding lines, respectively. Scale bar=100 nm.
