Figure 3: Influence of masking feature size on rectification.
From: Enabling complex nanoscale pattern customization using directed self-assembly
(a) Time series SEM images of parallel grains above a circular masking feature with R0=6.6 L0. (b) Parallel grain mean radii versus annealing time for three differently-sized circular masking features at H≈1.6 L0. Lines indicate mean values, starting from the mean masking feature radius. (c) Circular parallel lamellae grain mean radii versus annealing time using three BCP film thicknesses (H) for R0=3.7 L0. The graphical depiction of all data pertaining to (b) through (c) is located in Supplementary Figure 1. Scale bar=200 nm.
