Figure 2: Magnetotransport characterization of the 2DEG and SLG and high-temperature drag.
From: Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures
(a,b) Hall resistance Rxy (blue solid line) and longitudinal resistance Rxx (red solid line) of 2DEG and SLG, respectively. Hall measurements are performed in the two layers with the same configuration of electrical connections: Hall resistance is positive for holes and negative for electrons. (c) Drag voltage in the 2DEG as a function of the drive current flowing in SLG at T=42.5 K: data and a linear fit are shown. Error bars are calculated as s.d. from the average of 10 current sweeps. (d) Drag resistance RD as a function of temperature. Black (red) points refer to RD derived by measuring the voltage drop in SLG (2DEG), respectively. The three lines are Boltzmann-transport calculations in the Fermi-liquid regime (see ref. 47 and Supplementary Note 4). Different curves refer to different values of the interlayer distance d: d=31.5 nm (solid line), 46.5 nm (long-dashed line) and 39 nm (short-dashed line).
