Figure 3: Temperature dependence of the Coulomb drag resistance in the SLG/2DEG vertical heterostructure.
From: Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures
(a) RD obtained from a linear fit of the measured voltage drop in the 2DEG (passive layer) as a function of the drive current flowing in the SLG (drive layer). Error bars are the s.d. as obtained in the fit procedure. The dashed blue line is a best-fit of the standard Fermi-liquid type24: RD(T)=aT2 with a=(5.8±0.3) × 10−4 ΩK−2. (b) Zoom of RD in the low-T limit. The red solid line is a fit based on the functional form reported in equation (1). This fit describes very well the RD upturn at low T as the system approaches Tc~10–100 mK. (b) The data point at the lowest measured T=240 mK deviates from the logarithmic trend, possibly pointing to the onset of a saturation effect.
