Figure 1: Characterization at low field. | Nature Communications

Figure 1: Characterization at low field.

From: Composite fermions and broken symmetries in graphene

Figure 1

(a) Schematic of the device, consisting of a graphene/h-BN/graphite stack resting on SiO2. VBG is applied to the graphite back gate to tune the carrier density. (b) ρxx(n) in logarithmic scale, measured at B=0 T and T=4 K. Inset: ρxx(n, B) at very low field and density. (c) Fan diagram of ρxx(n, B) up to 11 T.

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