Figure 4: In-plane field dependence of the FQH states in the first two LLs of Device B at T=400 mK.

(a) ρxx(ν) between ν=0 and ν=2 (B⊥=17 T, B=17 and 44 T). (b) ρxx(ν) between ν=2 and ν=5 (B⊥=17 T, B=17, 33 and 44 T). Inset: schematic of the in-plane field dependence of the CF LL energies at fixed B⊥. (c) ρxx(ν) between ν=3 and ν=4 (B⊥=25 T, B=25 and 45 T).