Figure 3: Electrostatic modulation of the 2D-superconductvity at the (001) and (110) interfaces. | Nature Communications

Figure 3: Electrostatic modulation of the 2D-superconductvity at the (001) and (110) interfaces.

From: Engineering two-dimensional superconductivity and Rashba spin–orbit coupling in LaAlO3/SrTiO3 quantum wells by selective orbital occupancy

Figure 3

Temperature dependence of the resistance as a function of gate voltage for (a) (001)—and (b) (110)-oriented LaAlO3/SrTiO3 interfaces, respectively. In panels (c) and (d) we show the superconducting transitions in linear scale, for zero applied voltage, for (001) and (110) interfaces, respectively. (e) Superconducting TC (filled symbols) and sheet resistance (open symbols) of (001)—and (110)-interfaces plotted against the gate voltage. (f) Hall carrier density of (001)- (circles) and (110)- (triangles) interfaces. Solid lines correspond to the carrier density obtained from the analysis of the capacitance.

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