Figure 4: The percolation transition driven by density inhomogeneity in multilayer MoS2. | Nature Communications

Figure 4: The percolation transition driven by density inhomogeneity in multilayer MoS2.

From: Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures

Figure 4

(a–d) The schematic band diagrams of metal-BN-MoS2-metal structures at flat band (a), accumulation region (b), depletion region (c) and inversion region (d). (e–j) The schematic images showing the percolation-induced MIT under different effective thicknesses of electron states (e–g) and carrier densities (h–j). The circles denote isolated carrier puddles in MoS2. (k,l) The measured total capacitance Ct (k) and effective thickness deff (l) plotted as a function of gate voltage Vg for 2–300 K. The excitation voltage and frequency used are 50 mV and 100 kHz, respectively. (m) deff plotted as a function of temperatures at different carrier densities n.

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