Figure 2: Photoluminescence excitation spectroscopy of the interlayer exciton at 20 K.
From: Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures

(a) PLE intensity plot of the heterostructure region with an excitation power of 30 μW and 5 s charge-coupled device CCD integration time. (b) Spectrally integrated PLE response (red dots) overlaid on PL (black line) with 100 μW excitation at 1.88 eV. (c) Type-II semiconductor band alignment diagram for the 2D MoSe2–WSe2 heterojunction.