Figure 4: Theoretical reconfiguration capabilities of various graphene stacks.
From: Self-biased reconfigurable graphene stacks for terahertz plasmonics
Results are computed versus the type of doping of the stacks composing layers. A biasing voltage VDC is applied between the graphene sheets, as illustrated in the inset of Fig. 2a. The type of doping of the layers follows the nomenclature TB, where T={N,P} and B={N,P} are related to the top and bottom layers, respectively, and {N,P} refers to n-doped or p-doped graphene. The upper row shows the real (a) and imaginary (b) conductivity components of a stack composed of layers with opposite Fermi level. (c,d) Similar results for the case of a stack composed of layers with equal Fermi level. Other parameters are f=1.5 THz, τtop=τbot=0.03 ps and T=300 K.
