Figure 3: Spectroscopic characterizations of the graphene/h-BN heterostructures.
From: Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method
(a) Raman spectra in the graphene/h-BN and separated graphene regions. (b) Ultraviolet–visible absorption spectroscopy of the graphene/h-BN before and after plasma etching. The inset shows the plasma etching process.
