Figure 4: Auger electron spectroscopy and elemental mapping of the graphene/h-BN heterostructures.
From: Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method
(a) Auger electron spectroscopy of the graphene/h-BN and separated graphene regions. (b,c) Atomic concentration evolutions of C, N, B, O and Si during sputtering for the graphene/h-BN and isolated graphene regions, respectively. The etching rate is about 0.3 nm min−1 based on the calibration of SiO2. (d) C, (e) B and (f) N mapping of the transferred samples near the boundary of graphene/h-BN (upper left region) and separated graphene (lower right region) before plasma etching. (g) C, (h) B and (i) N mapping of the transferred samples near the boundary of graphene/h-BN (upper left region) and separated graphene (lower right region) after plasma etching. Scale bars in d–i, 5 μm.
