Figure 2: Electrical and optoelectronic properties of the p–n MoS2 field effect transistor. | Nature Communications

Figure 2: Electrical and optoelectronic properties of the p–n MoS2 field effect transistor.

From: Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide

Figure 2

(a) Output characteristics at various VG levels between 60 and −60 V, along steps of 10 V. Inset: output characteristics on the logarithmic scale in the current-on state. The ideality factor was estimated as 1.6. (b) The transfer characteristics and their photoresponses during both the forward and reverse sweeps. (c,d) Channel current mapping under dark conditions and the corresponding PC mapping as a function of various VD (from −3 to 3 V) and VG (from −60 to 60 V) levels illustrate the ambipolar carrier transport.

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