Figure 3: Effect of drain and gate biases on carrier transport in the p–n MoS2 field effect transistor.
From: Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
(a,b) The schematic diagram and the corresponding energy band diagrams versus the x–z plane under equilibrium condition. The black and red sold lines denote the vacuum energy level (Evac) along the z axis and the Fermi energy level (EF) in the MoS2 p–n junction, respectively. (c,d) The energy band diagrams illustrate a reduced potential barrier under a forward bias (VD>0 V), and an enlarged potential barrier under a reverse bias (VD<0 V). (e,f) The cross-section views illustrate the majority carrier transport at the accumulation (VG>0 V) and the minority carrier transport at the inversion (VG<0 V).
