Figure 1: Gating of topological insulator (Bi0.16Sb0.84)2Te3 thin film.
From: Quantum Hall effect on top and bottom surface states of topological insulator (Bi1−xSbx)2Te3 films
(a,b) Cross-sectional schematic and top-view photograph of a Hall-bar device. Broken line in b indicates the position for a. Scale bar, 300 μm. (c) Top gate voltage VG dependence of longitudinal conductivity σxx at various temperatures. (d,e) Effective gate voltage (VG−VCNP) dependence of longitudinal and transverse resistance (Rxx and Ryx) and inverse of Hall coefficient 1/RH under magnetic field B=3 T at temperature T=40 mK. The VG for the charge neutral point (CNP), VCNP, is defined as the gate voltage where Ryx is crossing zero.
