Figure 3: Comparison of encapsulated and exposed ultrathin black phosphorus (bP) field-effect transistors (FETs). | Nature Communications

Figure 3: Comparison of encapsulated and exposed ultrathin black phosphorus (bP) field-effect transistors (FETs).

From: Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere

Figure 3

(a) A schematic three-dimensional illustration of the device geometry. (b) Optical image of a typical device with outlines of the ultrathin bP crystal (black dashed-dotted line) and the passivating hexagonal BN crystal (blue dashed line). Scale bar, 3 μm. (c) Four-terminal conductance versus backgate voltage (Vg) of the passivated and exposed channels of two bP FETs at source–drain bias Vsd=50 mV and temperatrure T=300 K. Sample #1 thickness ∼4.5 nm and sample #2 thickness ∼5.7 nm. For the exposed region of sample #1 and #2, the backgate voltage has been shifted by −10 and −40 V, respectively. Field-effect mobilities were extracted from the line fit (black dashed line).

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