Figure 4: I – V characteristic of the passivated and exposed channels of a black phosphorus field-effect transistor. | Nature Communications

Figure 4: I – V characteristic of the passivated and exposed channels of a black phosphorus field-effect transistor.

From: Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere

Figure 4

(a) Two-terminal sheet conductance versus backgate voltage (Vg) of sample #2 from Fig. 3 for the passivated (solid blue curve) and exposed (solid red curve) channel at temperature T=200 K. (b) I–V characteristic of the device on the hole side for the passivated (solid blue curve) and exposed (solid red curve) channel taken at gate voltages Vg=−60 V and Vg=−50 V indicated by a vertical black line in a. (c) Source–drain current (Isd) versus source–drain voltage (Vsd) for the passivated channel on the electron conduction side at Vg from +30 to +75 V in steps of 5 V (solid curves). The inset shows the output conductance ∂Isd/∂Vsd at Vg=+75 V, Vg=+65 V and Vg=+55 V. (d) Isd versus Vsd for the exposed region on the electron conduction side at Vg from +30 to +75 V in steps of 5 V.

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