Figure 1: CVD graphene field effect device for pure spin transport.
From: Long distance spin communication in chemical vapour deposited graphene
(a) Schematic representation of a graphene device with ferromagnetic tunnel contacts for spin injection and detection in NL geometry. The current (I) injection circuit creates spin polarization in graphene via electrical spin injection and the isolated voltage (V) measurement circuit probes the NL pure spin signal. The red colour represents the spin density, which diffuses away from the place of injection in the graphene channel. The highly doped Si with SiO2 layer is used as the back gate to control the carrier density (n) in graphene. (b) Optical microscope image of a fabricated long channel CVD graphene device on SiO2/Si substrate with multiple ferromagnetic tunnel contacts of Co/TiO2 patterned by electron-beam lithography. The NL measurement scheme is presented for 16-μm-long graphene channel with current (I) and voltage (V) circuits.
