Figure 2: Electrical properties of MICM devices employing various oxide insulators.
From: Direct electron injection into an oxide insulator using a cathode buffer layer
(a–d) Current–voltage characteristics of the MICM devices employing (a) a 200-nm SiO2 fabricated by PECVD, (b) a 100-nm Ta2O5 deposited by radiofrequency magnetron sputtering, (c) a 10-nm HfO2 and (d) a 10-nm Al2O3 grown by ALD. In a–d, the P++-Si and Au were used for metal anode and cathode, respectively; the red and blue solid lines depict the electrical properties of the device with and without the CBL, respectively. (e) Current–voltage characteristics of the MICM devices in a–d represented in log-log scale axes.
