Figure 3: An application of MICM devices as electrostatic discharge (ESD) diodes for protecting ZnO TFTs.
From: Direct electron injection into an oxide insulator using a cathode buffer layer
(a) An equivalent circuit of the TFT parallel connected with ESD diode; ID is the electrical current inputs injecting into a drain electrode of the TFT; IS and IESD indicate the electrical current passing through the TFT and the ESD diode, respectively; VD (or VG) depicts the introduced voltage between the drain (or gate) and source electrode of the TFT. (b) The VD–currents characteristics of the circuit in a; ID with the ESD diode for black, IS for blue, IESD for magenta and ID without the ESD diode for turquoise colour solid line; the insulator and cathode for the MICM device are a thermally-grown 100-nm SiO2 and Al, respectively; the ZnO TFT has a channel length (or width) of 50 μm (or 1,000 μm) and the 100-nm SiO2 gate insulator, and the device is under VG=10 V.
