Figure 1: Impact of surface band bending on the overall water splitting reaction.
From: Visible light-driven efficient overall water splitting using p-type metal-nitride nanowire arrays
Schematic of carrier generation, radiative and non-radiative recombination processes. The four electron–hole water splitting mechanism is illustrated on n- (p-) doped semiconductors with upward- (downward-) surface band bending in the two bottom panels. While the oxidation reaction of water proceeds efficiently on n-doped semiconductor surface, the reduction reaction is suppressed due to the presence of upward band bending. In the case of p-doped semiconductor, the oxidation reaction and consequently the reduction reaction are suppressed due to the presence of downward band bending at the surface.
