Figure 2: Structural and optical properties of In0.26Ga0.74N nanowires.
From: Visible light-driven efficient overall water splitting using p-type metal-nitride nanowire arrays
(a) Schematic of In0.26Ga0.74N nanowire structure showing three InGaN nanowire segments on a GaN nanowire template. (b) A 45° tilted SEM image of as-grown In0.26Ga0.74N nanowires on Si (111) substrate. Scale bar, 1 μm. (c) Room temperature μ-PL spectrum from as-grown In0.26Ga0.74N nanowires. (d) STEM-secondary electron image of a single In0.26Ga0.74N nanowire. Scale bar, 50 nm. (e) EDXS elemental (In) mapping of the In0.26Ga0.74N nanowire. Scale bar, 50 nm. (f) STEM-HAADF image of a single In0.26Ga0.74N nanowire (Fig. 2e) reveals the existence of three segments of InGaN in GaN nanowire. Scale bar, 50 nm. (g) HRSTEM-BF lattice image of the selected region in Fig. 2f, illustrating lattice fringes from a defect-free single crystalline In0.26Ga0.74N nanowire. Scale bar, 2 nm.
