Figure 3: Characteristics of top-contact FET and its change after thermal annealing.

Characteristics of top-contact type FETs made using polycrystalline thin films of Ph-BTBT-10 fabricated from 0.5 wt% p-xylene solution in the SmE phase at ca., 80 °C. Output characteristics of FETs fabricated using the polycrystalline thin films (a) as-coated and (c) after thermal annealing at 120 °C for 5 min, (b) transfer characteristics of FETs fabricated with polycrystalline thin films both as-coated and after thermal annealing, (d) FET mobility as a function of annealing temperature, the error bars calculated from the standard deviations over 10 samples in each annealing temperature, (e) a topographic image of the polycrystalline thin films after annealing at 120 °C, as obtained by AFM, (f) out-of-plane small-angle XRD patterns for crystalline films as-coated and after annealing, with a schematic illustration of the crystalline structure and (g) DSC data for Ph-BTBT-10 during fast cooling and heating at 20 °C min⁻¹.