Figure 4: Characteristics of the polycrystalline thin films and contact resistance. | Nature Communications

Figure 4: Characteristics of the polycrystalline thin films and contact resistance.

From: Liquid crystals for organic thin-film transistors

Figure 4

Depth profile of sulfur atom (a) before, (e) after thermal annealing at 120 °C observed by TOF-SIMS. Depth axis was determined by sputtering rate. Polarized optical microscope images of polycrystalline thin films of Ph-BTBT-10 (b) before and (f) after thermal annealing at 120 °C for 5 min. White bars indicate scale of 20 μm in length. Contact resistance of FETs fabricated with polycrystalline thin film of Ph-BTBT-10 (c,d) before and (g,h) after thermal annealing at 120 °C for 5 min evaluated by transfer line method.

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