Figure 6: Reliability of FETs and fabrication of uniform thin films at 40 °C. | Nature Communications

Figure 6: Reliability of FETs and fabrication of uniform thin films at 40 °C.

From: Liquid crystals for organic thin-film transistors

Figure 6

FET characteristics of bottom-gate, bottom-contact type FETs made with polycrystalline thin films of Ph-BTBT-10 after thermal annealing at 120 °C. (a) Variations of FET mobility in five films. Thermal durability properties of FET fabricated with polycrystalline thin films of Ph-BTBT-10. (b) FET mobility as a function of stress temperature. Polycrystalline thin films of Ph-BTBT-10 fabricated from a p-xylene solvent mixture. (c) Optical microcopy texture and (d) AFM image. (c) White bar indicates a scale of 20 μm in length. Cryst., crystalline; Liq, liquid.

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