Figure 3: The effect of mobility on the achievable PCE.

(a) Scheme of the two band gaps involved. (b) Efficiencies are plotted as a function of effective semiconductor band gap, without an offset between donor and acceptor, that is, EG,abs=EG,eff and (c) with an offset ΔLL of 0.5 eV. Shown are the results for six different mobilities calculated either via the analytical approach (thin lines with symbols) or via drift-diffusion simulations (thick lines) in comparison with the Scharber model49. For parameters, see text.