Table 1 Parameters used for the numerical simulations.
Parameters | Meaning | Value |
|---|---|---|
T | Temperature | 300 K |
Photoactive layer | ||
G | Generation rate (varied) | 8 × 1021 cm−3 s−1 (at ‘1 sun’) |
dabs | Thickness of photoactive layer | 10−5 cm (100 nm) |
ɛabs | Dielectric permittivity of photoactive layer | 3.4 |
EG,abs | Band gap energy of photoactive layer | 1.3 eV |
NETL (HTL) | Effective density of states in the ETL (HTL) | 5 × 1020 cm−3 |
kdir | Recombination coefficient | 10−11 cm3s−1 |
EETL | Energy of the ETL | 3.8 eV |
EHTL | Energy of the HTL | 5.1 eV |
μe,h | Mobility of electrons and holes | Varied, but always μe=μh |
Selective layers | ||
dsel | Thickness of selective layers | 10−6 cm (10 nm) |
ɛsel | Dielectric permittivity of selective layers | 10 |
EG,sel | Band gap energy of selective layers | See text |
EETL | Energy of the ETL | See text |
EHTL | Energy of the HTL | See text |
NETL (HTL) | Effective density of states in the ETL (HTL) | 5 × 1020 cm−3 |
μsel | Mobility of electrons and holes | 10 cm2(Vs)−1 |
ksel | Recombination coefficient | 10−15 cm3 s−1 |
Electrodes | ||
WF,e | Work function of the electron contact | 4.0 eV |
WF,h | Work function of the hole contact | 4.9 eV |
ve,h | Surface recombination velocity of electrons and holes | 1012 cm s−1 |
