Figure 6: Measured optical property of TaIrGe semiconductor. | Nature Communications

Figure 6: Measured optical property of TaIrGe semiconductor.

From: Design and discovery of a novel half-Heusler transparent hole conductor made of all-metallic heavy elements

Figure 6

(a) Optical spectra. The absorption spectra are obtained from the ultraviolet/visible diffuse reflectance spectra converted by the Kubelka–Munk26 method (arbitrary units). (b,c) The band gap of TaIrGe semiconductor determined by indirect and direct absorption, respectively. The optical band gap is determined by applying Tauc plots34. (d) Transmittence for TaIrGe thin film (∼30 nm thick) grown on Quartz substrate using pulsed laser deposition (PLD) method. The images of the transparent quartz substrate and TaIrGe thin film on substrate are shown in the inset of d.

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