Figure 3: Electromechanical behaviour of a MoS2 device measured between different S–D electrodes. | Nature Communications

Figure 3: Electromechanical behaviour of a MoS2 device measured between different S–D electrodes.

From: Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics

Figure 3

(a,b) Typical I–Vb characteristics of the device at different applied forces in the centre of the device measured between two S–D electrodes shown in the inset. (c) The I–Vb curves with both positive and negative bias voltage from −1 to 1 V. The inset is the fitting of lnI as a function of V1/4 by the I–Vb curve without strain using the thermionic emission–diffusion theory for a reversely biased Schottky barrier. The black dotted lines are experimental data points and the red line is a linear fitting. (d) The derived change of the barrier height as a function of applied force at a D–S bias of −1 and 1 V, respectively. The blue line is a linear fitting.

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