Figure 3: The schematic of the carrier transfer processes and the calculated valley/hill population fraction.

(a) The schematic illustration of the conduction band and valence band. (b) The electric-field-induced carrier transfer between different energy valleys and hills. The equivalent valley number and hill number are 6 at K and Λ points and 1 at the Γ point. (c) The calculated electron population fraction at the K valley as a function of the applied electric field for different thickness MoS₂ flakes. (d) The calculated hole population fraction at the K hill as a function of the applied electric field for different thickness MoS₂ flakes.