Figure 5: Thickness-dependent EL for vertically stacked GaN–Al2O3–MoS2–Al2O3-graphene heterostructures. | Nature Communications

Figure 5: Thickness-dependent EL for vertically stacked GaN–Al2O3–MoS2–Al2O3-graphene heterostructures.

From: Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide

Figure 5

(a) The normalized EL spectra for vertical devices with MoS2 flakes of varying thickness. The spectra are normalized by the injection of current density to compare with each other. The GaN emission has been subtracted based on a Gaussian fitting. (b) The integrated EL intensity as a function of the thickness of the MoS2 flakes. The red points are experimental results and the blue hollow squares are obtained from theoretical calculation.

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