Figure 2: Electrical characterization of tunnel contacts.
From: Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers
(a) I–V curves of the Au/Ti/150 nm nanowire/Ti/Au contact circuit (red) and the NiFe (7.5 μm wide)/Graphene/150 nm nanowire/Ti/Au contact circuit (blue) at 10 K. (b) Temperature dependence of zero-bias resistance for the NiFe/graphene contact (weakly insulating) and Au/Ti contact (metallic).
