Figure 3: 3T Hanle measurements.
From: Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers
(a) Schematic of the 3T measurement; (b) simplified diagram illustrating spin injection from the NiFe across the graphene tunnel barrier producing spin accumulation in the Si NW and the Hanle spin precession measurement. N↑(E) and N↓ (E) are the majority and minority spin density of states, respectively. (c) Raw data for the normal (blue trace, magnetic field out of plane) and inverted (red trace, magnetic field in plane) 3T Hanle measurements for a 150-nm diameter NW at 10 K and −200 μA bias current (spin injection). (d) Same normal Hanle curve as c after a quadratic background subtraction and plotted as resistance. The red line is a fit of the data.
