Figure 4: NLSV and Hanle measurements.
From: Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers
(a) NLSV data on 150 nm wide nanowire, contacts are 200 nm and 1 μm wide with a 200 nm edge-to-edge spacing. The arrows indicate the relative orientation of the magnetizations of the injector and detector contacts, and the blue and red traces indicate increasing and decreasing magnetic field sweeps. (b) NLSV on bulk Si sample with the same contact layout. (c) Raw NLSV Hanle data for the Si NW for parallel alignment of contacts 2 and 3. (d) Same NLSV Hanle data after background subtraction. All data are for a bias current of −200 μA at T=10 K, peak is 5 mΩ.
