Figure 4: Fatigue testing when stretching and releasing 500 times. | Nature Communications

Figure 4: Fatigue testing when stretching and releasing 500 times.

From: Intrinsically stretchable and transparent thin-film transistors based on printable silver nanowires, carbon nanotubes and an elastomeric dielectric

Figure 4

(a) Typical transfer characteristics (VD=−2.0 V) of a TFT device after specified cycles of 20% tensile strain applied along the channel length direction. The insets show log-scale characteristics. (b) Plots of ION and IOFF at 0% strain during 500 cycles of continuous stretching–relaxing between 0 and 20% strains along the channel length direction. (c) Typical transfer characteristics (VD=−2.0 V) of a device after specified cycles of 20% tensile strain applied along the channel width direction. The insets show log-scale characteristics. (d) Plots of ION and IOFF at 0% strain during 500 cycles of continuous stretching–relaxing between 0 and 20% strains along the channel width direction.

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