Figure 7: Characterization of OLED control circuit with stretchable TFT under different strains. | Nature Communications

Figure 7: Characterization of OLED control circuit with stretchable TFT under different strains.

From: Intrinsically stretchable and transparent thin-film transistors based on printable silver nanowires, carbon nanotubes and an elastomeric dielectric

Figure 7

Output (IOLED–VDD) characteristics of the OLED controlled by a stretchable SWCNT-AgNW TFT. The TFT is stretched along channel length direction by (a) 0%, (b) 20% and (c) 30% strains. The VG is varied from 0 to −5.0 V in 1 V increments. Transfer (IOLED–VG) characteristics at VDD=−4.0 V for the TFT device used to control the OLED under 0% (d), 20% (e) and 30% (f) strains.

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