Figure 3: Shubnikov-de Haas oscillations.
From: Two-dimensional magnetotransport in a black phosphorus naked quantum well
(a) The measured resistance R2P of a 47±1 nm two-terminal bP FET on a log-scale as a function of magnetic field B applied normal to the bP layer at different gate voltages at T=0.3 K. A weak localization peak at low field, a slowly varying positive magnetoresistance, and SdH oscillations are observed. The slowly varying positive magnetoresistance has a parabolic form, with an example of a best-fit shown by the dashed line. (b) Subtracting the magnetoresistance background, the oscillating resistance ΔR2P is plotted as a function of 1/B, with vertical offsets for clarity. The SdH oscillations were fit to the Lifshitz-Kosevitch formula, indicated by dashed lines. (c) The measured longitudinal resistance RXX of a 47±1 nm Hall bar bP FET on a log-scale as a function of magnetic field B applied normal to the bP layer at different gate voltages at T=0.3 K. SdH oscillations are observed. (d) The oscillatory longitudinal resistance ΔRXX, determined by subtraction of a parabolic best-fit to the slowly varying background resistance, plotted versus 1/B at constant gate voltage Vg=−100 V and varying temperature T. The SdH oscillation amplitude decreases with increasing temperature. (e) The longitudinal resistance ΔRXX maxima at B=26 T and B=32 T at gate voltage Vg=−100 V plotted versus temperature T is indicated with circles. Dashed lines show a best-fit to the thermal damping function R0 × Λ/sinh(Λ).
