Figure 7: Field effect mobility.
From: Two-dimensional magnetotransport in a black phosphorus naked quantum well
(a) The ac conductance G versus gate voltage Vg at several different temperatures T for a two-terminal device of 47±1 nm bP thickness. Hysteresis observed at room temperature is suppressed at low temperature. (b) Field-effect mobility μFE at fixed gate voltage Vg =−20 V versus temperature T assuming 100% gate efficiency and a gate efficiency of 78% as determined from SdH frequency analysis versus gate voltage. The error in mobility was determined by the noise in the measured conductance. The error bars are smaller than the symbol size.
