Figure 1: Operando probing of solar cell energy band depth profiles with cross-sectional SKPM.
From: Quantitative o perando visualization of the energy band depth profile in solar cells
(a) Schematic illustration of ion-beam-milling configuration to expose a smooth cross-section of an OPV device; (b) schematic illustration of cross-sectional SKPM measurements under operating conditions such as illumination and bias voltages. The cantilever approaches the sample from the side opened up using ion-beam milling. SKPM scanning is carried out with the cantilever long axis normal to the device plane; (c) SEM micrograph of an ion-beam-milled OPV device cross-section (scale bar, 250 nm); and (d) current density versus voltage (J–V) characteristics of an OPV device with a conventional configuration ITO/MoOx/P3HT:PCBM/LiF/Al under AM 1.5G illumination before (black) and after (red) cross-section preparation, and after SKPM measurement (voilet), indicating good device stability.
