Figure 7: Device characteristics and SP of a PJ device.
From: Quantitative o perando visualization of the energy band depth profile in solar cells
(a) J–V curve of a ITO/ZnO/PCBM/P3HT/MoOx/Al PJ device under AM 1.5G illumination, (b) EQE of the PJ device (triangles) and the BHJ device (squares) that are shown in Fig. 2, (c) SP image (scale bar, 400 nm) and (d) SP profile of the PJ device cross-section under short-circuit conditions in the dark.
