Figure 4: Electrical transport properties.
From: Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors
(a,b) Optical and Raman map of a MoS2/MoSe2 (green/red) heterojunction device. (c,d) Raman and PL spectra of MoS2 and MoSe2 obtained from each region showing a distinct peak for regions away from the junction and appearance of both peaks at the junction. (e) First-principles DFT calculation of MoSe2 and MoS2 superlattices showing the formation of type-I band alignment. (f) Ids−Vds characteristics of the heterojunction showing an n–n junction behaviour at the interface.
