Figure 3: Experimental demonstration a low-voltage hyper-FET using next generation FinFET technology beyond Si.
From: A steep-slope transistor based on abrupt electronic phase transition
(a) Schematic of the n-hyper-FET consisting of a series combination of a scaled VO2 (
=200 nm) and a multi-channel (=3 fins) In0.7Ga0.3As quantum-well FinFET (Lg=500 nm). (b) Transfer characteristics (IDS–VGS) of the hyper-FET and the stand-alone FinFET. (c) The positive feedback provided by the VO2 enables the hyper-FET to exhibit a ∼20 % higher ON-state current (IDS,ON) compared with the stand-alone n-FinFET over a gate-voltage window of 0.8 V at matched OFF-state current. (d) Output characteristics (IDS–VDS) of the n-hyper-FET and the conventional FinFET.
