Figure 1: Damage recovery in SiC under 21 MeV Ni+ ion irradiations.
From: Ionization-induced annealing of pre-existing defects in silicon carbide
The initial damage states of (a) 0.72 and (b) 1.0 were produced by 900 keV Si+ with a fluence of 6.3 and 12 ions per nm2, respectively. Reduction of relative disorder is clearly evident with the increase of Ni fluence from 0.2 to 10 ions per nm2. The combined statistical and measurement uncertainty is represented by the scattered data points from the fitted lines.
