Figure 4: Atomic-level damage recovery.
From: Ionization-induced annealing of pre-existing defects in silicon carbide
HAADF images (a–c) and the atomic displacement map (d–f) of a virgin (a) and pre-damaged sample (S0=0.72) before (b,e) and after (c,f) 21 MeV Ni+ irradiation to 10 ions per nm2. The scale bars on the HAADF images correspond to 1 nm. The vector modulus (d–f) of the corresponding HAADF images (a–c) represents the displacement of each atom from its ideal position. The colour bar represents the vector modulus with a measurement error bar of 0.1 Å.
