Figure 5: Ionization-induced recovery cross-section.
From: Ionization-induced annealing of pre-existing defects in silicon carbide
The cross-section is derived from samples with initial disorder levels S0 of 0.36 and 0.72 as a function of electronic energy loss. The effective cross-section depends on the ions (C, O, Si and Ni) and the initial damage state. The combined measurement and fitting uncertainty is <10%.
