Figure 3: Resistance and shot noise of p–n junction in the QH regime.
From: Edge mixing dynamics in graphene p–n junctions in the quantum Hall regime
(a) Image plot of the two-terminal resistance as a function of Vtg and Vbg at 8 T. (b) Cross-sections of the image plot a at Vbg=22, 16, 4 and −5 V. (c) SI as a function of Vsd at 8 T at (Vtg,Vbg)=(2.5 V, 4 V) and (−0.5 V, 16 V), which correspond to (νtg, νbg)=(6, −2) and (2, 2), respectively. The solid curve is the result of the numerical fitting to equation (1). (d) SI as a function of Vsd at 0 T at the corresponding gate voltage conditions for (c). The solid curves are the result of the numerical fitting to equation (1).
